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UPA2811T1L Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # UPA2811T1L
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA2811T1L Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0191EJ0100 Rev.1.00
Page 1 of 6
Jan 11, 2011
Preliminary Data Sheet
μ PA2811T1L
MOS FIELD EFFECT TRANSISTOR
Description
The
μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2811T1L-E1-AY
1
μ PA2811T1L-E2-AY
1
Pure Sn
Tape 3000 p/reel
8-pin HVSON (3333)
typ. 0.028 g
Note: 1. Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (TA = 25
°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m25
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
m19
A
Drain Current (pulse)
1
ID(pulse)
m76
A
Total Power Dissipation
2
PT1
1.5
W
Total Power Dissipation (PW = 10 sec)
2
PT2
3.8
W
Total Power Dissipation (TC = 25
°C)
PT3
52
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current
3
IAS
−19
A
Single Avalanche Energy
3
EAS
36
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
83.3
°C/W
Channel to Case (Drain) Thermal Resistance
Rth(ch-C)
2.4
°C/W
Notes: 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0191EJ0100
Rev.1.00
Jan 11, 2011


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