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UPA2811T1L Datasheet(PDF) 1 Page - Renesas Technology Corp |
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UPA2811T1L Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS0191EJ0100 Rev.1.00 Page 1 of 6 Jan 11, 2011 Preliminary Data Sheet μ PA2811T1L MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A) • 4.5 V Gate-drive available • Built-in gate protection diode • Small & thin type surface mount package with heat spreader (8-pin HVSON) • Halogen free and RoHS compliant Ordering Information Part No. LEAD PLATING PACKING Package μ PA2811T1L-E1-AY ∗ 1 μ PA2811T1L-E2-AY ∗ 1 Pure Sn Tape 3000 p/reel 8-pin HVSON (3333) typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25 °C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS m25 V Drain Current (DC) (TC = 25 °C) ID(DC) m19 A Drain Current (pulse) ∗ 1 ID(pulse) m76 A Total Power Dissipation ∗ 2 PT1 1.5 W Total Power Dissipation (PW = 10 sec) ∗ 2 PT2 3.8 W Total Power Dissipation (TC = 25 °C) PT3 52 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current ∗ 3 IAS −19 A Single Avalanche Energy ∗ 3 EAS 36 mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 83.3 °C/W Channel to Case (Drain) Thermal Resistance Rth(ch-C) 2.4 °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 |
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