UPA2765T1A-E2-AY datasheet(3/7 Pages) RENESAS

Part #	UPA2765T1A-E2-AY

Description	N-channel MOSFET 30 V, 100 A, 1.3 m

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

μPA2765T1A

R07DS0882EJ0102 Rev.1.02

Page 3 of 6

Nov 28, 2012

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

FORWARD BIAS SAFE OPERATING AREA

0

20

40

60

80

100

120

140

0

25

50

75

100

125

150

175

TC - Case Temperature - °C

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

ID(pulse)=256A

Tc=25°C

Single Pulse

PW

=20

0us

1m

s

10m

s

100

ms

RD

S(o

n)L

im

ite

d

VG

S=

10

V

Power Dissipation Limited

VDS - Drain to Source Voltage – V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.01

0.1

1

10

100

1000

Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt)

Single pulse

Rth(ch-A) = 83.3 °C/W

Rth(ch-C = 1.5 °C/W

PW - Pulse Width - s

DRAIN CURRENT(DC) vs. CASE TEMPERATURE

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

0

25

50

75

100

125

150

0

25

50

75

100

125

150

175

TC - Case Temperature - °C

0

50

100

150

200

250

300

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

VGS=10V

Pulsed

VGS=4.5V

VDS - Drain to Source Voltage - V

100

μ

1 m

10 m

100 m

1

10

100

1000

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