UPA2631T1R-E2-AX datasheet(1/7 Pages) RENESAS

Part #	UPA2631T1R-E2-AX

Description	P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0991EJ0100 Rev.1.00

Page 1 of 6

Dec 27, 2012

Data Sheet

μPA2631T1R

P-CHANNEL MOSFET

–20 V, –8.0 A, 32 m

Ω

Description

The

μPA2631T1R is P-channel MOS Field Effect Transistors for switching application.

This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features

• –1.8V drive available

• Low on-state resistance

⎯ R

DS (on)1 = 32 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A)

⎯ R

DS (on)2 = 41 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)

⎯ R

DS (on)3 = 62 mΩ MAX. (VGS = –1.8 V, ID = –3.0 A)

• Built-in gate protection diode

• Lead-free and Halogen-free

Ordering Information

Part Number

Package

μPA2631T1R-E2-AX∗1

6pinHUSON2020

Note:

∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

–20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m8

V

Drain Current (DC)

ID(DC)

m6.0

A

Drain Current (pulse) ∗

1

ID(pulse)

m24

A

Total Power Dissipation (5 s) ∗

2

PT

2.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

TSTG

–55 to +150

°C

Notes:

∗1. PW≤10

μs, Duty Cycle≤1%

∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt

R07DS0991EJ0100

Rev.1.00

Dec 27, 2012

6pinHUSON2020

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