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RQK2001HQDQA Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RQK2001HQDQA Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 8 page  RQK2001HQDQA Preliminary R07DS0311EJ0200 Rev.2.00 Page 5 of 7 Mar 28, 2011 Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc (°C) 1000 100 1 10 0.01 0.1 1 VGS = 10 V, VDD = 100 V Rg = 50 Ω, duty ≤ 1 % Tc = 25°C tr tf td(off) td(on) 1 10 100 010 20 30 40 50 Crss Coss VGS = 0 V f = 1 MHz Ciss 55 60 65 70 75 80 –10 –8 –6 –4 –2 024 68 10 50 VDS = 0 f = 1 MHz 0 0.4 0.8 1.2 1.6 2.0 1.0 0.4 0.2 0.6 0.8 0 1.2 1.4 1.6 VGS = –25, –20, –15 –10, –5, 0 V Pulse Test Tc = 25°C 10, 15, 20, 25 V 5 V 0 0.2 0.4 0.6 0.8 1.0 –25 0 25 50 75 100 125 150 1 mA ID = 10 mA VGS = 0 |
Similar Part No. - RQK2001HQDQA_11 |
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