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RQJ0305EQDQA Datasheet(PDF) 4 Page - Renesas Technology Corp |
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4 / 8 page RQJ0305EQDQA Preliminary R07DS0297EJ0200 Rev.2.00 Page 4 of 7 Mar 28, 2011 Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Case Temperature (2) Case Temperature Tc ( °C) Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Zero Gate Voltage Drain current vs. Case Temperature Case Temperature Tc ( °C) 0.01 0.1 1 –0.1 –1 –100 –10 –25 02550 75 100 125 150 –1 –10 –100 –10000 –1000 0 –0.1 –0.3 –0.2 –0.5 –0.4 0 –2–4–6 –8 –10 Pulse Test VGS = 0 V VDS = –30 V –2.0 A –1.0 A –1.5 A Pulse Test Tc = 25 °C ID = –2.4 A –10 V –4.5 V VGS = –2.5 V Pulse Test Tc = 25 °C 0 0.15 0.1 0.05 0.2 0.25 0.3 –25 02550 75 100 125 150 –1.5 A –2.0 A ID = –2.4 A Pulse Test VGS = –2.5 V –0.5A –1.0 A 0 0.02 0.08 0.12 0.2 0.16 –25 02550 75 100 125 150 Pulse Test VGS = –4.5 V –1.5 A –2.0 A ID = –2.4 A –0.5A –1.0 A 1 10 –0.1 10 1 –25 °C 25 °C Pulse Test VDS = –10 V Tc = 75 °C |
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