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KA2S0880 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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KA2S0880 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  KA2S0880 SPS 2 ABSOLUTE MAXIMUM RATINGS NOTES: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C 4. L=13uH, VDD=330V, Tj=25°C Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 800 V Drain-Gate voltage (RGS=1MΩ) VDGR 800 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 32.0 ADC Single pulsed avalanche energy (3) EAS 810 mJ Avalanche current (4) IAS 25 A Continuous drain current (TC=25°C) ID 8.0 ADC Continuous drain current (TC=100°C) ID 5.6 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to V SD V Total power dissipation PD (watt H/S) 190 W Derating 1.54 W/ °C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
Similar Part No. - KA2S0880 |
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Similar Description - KA2S0880 |
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