Electronic Components Datasheet Search |
|
RJP1CS06DWT-80X0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
|
RJP1CS06DWT-80X0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page RJP1CS06DWT/RJP1CS06DWA Preliminary R07DS0829EJ0100 Rev.1.00 Page 2 of 3 Jan 23, 2013 Electrical Characteristics (These data are an actual measurement value in a package.) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current ICES — — 1 A VCE = 1250 V, VGE = 0 Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 5.0 — 6.8 V VCE = 10 V, IC = 3.3mA Collector to emitter saturation voltage VCE(sat) — 1.8 2.25 V IC = 100 A, VGE = 15 V Note1 Input capacitance Cies — 10.0 — nF Output capacitance Coes — 0.28 — nF Reveres transfer capacitance Cres — 0.23 — nF VCE = 25 V VGE = 0 f = 1 MHz td(on) — 70 — ns tr — 60 — ns td(off) — 420 — ns Switching time tf — 140 — ns VCC = 600 V Note2 IC = 100 A VGE = ±15 V Rg = 10 , Tj = 125 C Inductive load Short circuit withstand time tsc 10 — — s VCC 720 V , VGE = 15 V Tj = 150 C Notes: 1. Pulse test. 2. Switching time test circuit and waveform are shown below. Switching Time Test Circuit Waveform Diode clamp D.U.T Rg L VCC td(off) td(on) tf tr 90% 90% 90% 10% 10% 10% VGE IC |
Similar Part No. - RJP1CS06DWT-80X0 |
|
Similar Description - RJP1CS06DWT-80X0 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |