80W Power Packaged Transistor

CHK080A-SRA

Ref. : DSCHK080A-SRA3148 - 28 Jun 13

2/14

Specifications subject to change without notice

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Recommended DC Operating Ratings

Tcase= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Drain to Source Voltage

20

50

V

Gate to Source Voltage

-1.8

V

transistor)

Quiescent Drain

Current

0.6

2

A

Drain Current

4

(1)

A

Compressed mode

Gate Current

(forward mode)

0

48

mA

Compressed mode

Junction Temperature

200

°C

DC Characteristics

Tcase= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Pinch-Off Voltage

-3

-2

-1

V

Saturated Drain Current

16

(1)

A

Gate Leakage Current

(reverse mode)

-6

mA

Drain-Source

Break-down Voltage

200

V

Thermal Resistance

1.8

°C/W

CW Mode

RF Characteristics (CW)

Symbol

Parameter

Min

Typ

Max

Unit

Small Signal Gain

14

16

dB

Saturated Output Power

70

80

W

PAE

Max Power Added Efficiency

45

50

%

Associated Gain at Max PAE

12

dB