CHR3664-QEG

17-27GHz Down-Converter

Ref. : DSCHR3664-QEG1192 - 11 Jul 11

4/22

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Device thermal performances

All the figures given in this section are obtained assuming that the QFN device is cooled

down only by conduction through the package thermal pad (no convection mode considered).

The temperature is monitored at the package back-side interface (Tcase) as shown below.

The system maximum temperature must be adjusted in order to guarantee that Tcase

remains below than the maximum value specified in the next table. So, the system PCB must

be designed to comply with this requirement.

A derating must be applied on the dissipated power if the Tcase temperature cannot be

maintained below than the maximum temperature specified (see the curve Pdiss. Max) in

order to guarantee the nominal device life time (MTTF).

Recommended max. junction temperature (Tj max)

:

124 °C

Junction temperature absolute maximum rating

:

175 °C

Max. continuous dissipated power (Pdiss. Max.)

:

1.3 W

=> Pdiss. Max. derating above Tcase

°C :

33 mW/°C

Junction-Case thermal resistance (Rth J-C)

(2)

:

<30 °C/W

Minimum Tcase operating temperature

(3)

:

-40 °C

Maximum Tcase operating temperature

(3)

:

85 °C

Minimum storage temperature

:

-55 °C

Maximum storage temperature

:

150 °C

(1) Derating at junctio n temperature co nstant = Tj max.

(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n

o f the M M IC and all the devices biased.

(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).

6.0

DEVICE THERMAL SPECIFICATION : CHR3664-QEG

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-50

-25

0

25

50

75

100

125

150

Tcase (°C)

Pdiss. Max. @Tj <Tj max (W)

Tcase

Example: QFN 16L 3x3

Location of temeprature

reference point (Tcase)

on package's bottom side