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2N3713 Datasheet(PDF) 3 Page - Comset Semiconductor |
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2N3713 Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 4 page NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 05/11/2012 COMSET SEMICONDUCTORS 3 | 4 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VBE(SAT) Base-Emitter saturation Voltage (*) (**) IC=5 A, IB=0.5 A 2N3713 - - 2 V 2N3714 2N3715 - - 1.5 2N3716 VBE Base-Emitter Voltage (*) (**) IC=3 A, VCE=2 V 2N3713 - - 1.5 V 2N3714 2N3715 2N3716 hfe Small Signal Current Gain VCE=10 V, IC=0.5 A f=1.0 kHz 2N3713 25 - 250 - 2N3714 2N3715 2N3716 VCE=10 V, IC=0.5 A f=1.0 MHz 2N3713 4 - 4 - 2N3714 2N3715 2N3716 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (**) These parameters are measured with voltage sensing contacts separate from the current carrying contacts |
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Similar Description - 2N3713 |
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