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2N3791 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N3791 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 05/11/2012 COMSET SEMICONDUCTORS 1 | 4 E EP PIIT TA AX XIIA AL L--B BA AS SE E T TR RA AN NS SIIS ST TO OR RS S The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-BaseVoltage IE = 0 2N3789 -80 V 2N3791 2N3790 -100 2N3792 VCEO Collector-Emitter Voltage IB = 0 2N3789 -60 V 2N3791 2N3790 -80 2N3792 VEBO Emitter-Base Voltage IC = 0 -7 V IC Collector Current -10 A IB Base Current -4 A PD Total Device Dissipation @ TC = 25° 150 W TJ Junction Temperature -65 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case (Max) 1.17 °C/W |
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