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2N4030 Datasheet(PDF) 3 Page - Comset Semiconductor |
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2N4030 Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 4 page PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 17/10/2012 COMSET SEMICONDUCTORS 3/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit hFE (*) DC Current Gain -IC = 100 µA, -VCE = 5 V 2N4030 30 - - - 2N4031 2N4032 75 - - 2N4033 -IC = 100 mA, -VCE = 5V 2N4030 40 - 120 2N4031 2N4032 100 - 300 2N4033 -IC = 500 mA, -VCE = 5V 2N4030 25 - - 2N4031 2N4032 70 - - 2N4033 -IC = 1 A, -VCE = 5 V 2N4030 15 - - 2N4031 10 - - 2N4032 40 - - 2N4033 25 - - -IC = 100 mA, -VCE = 5V Tamb = -55°c 2N4030 15 - - 2N4031 2N4032 40 - - 2N4033 fT Transition Frequency -IC = 50 mA, -VCE = 10 V f = 100 MHZ 2N4030 100 - 400 MHZ 2N4031 2N4032 150 - 500 2N4033 CEBO Emitter – base Capacitance IC = 0, -VEB = 0.5 V f = 1 MHZ - - 110 pF CCBO Collector – base Capacitance IE = 0, -VCB = 10V f = 1 MHZ - - 20 pF tS Storage times -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA - - 350 ns tf Fall times -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA - - 50 ns ton Turn-on times -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA - - 100 ns (*) Pulsed : pulse duration = 300µs, duty cycle = 1% |
Similar Part No. - 2N4030 |
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Similar Description - 2N4030 |
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