PNP 2N6053

17/10/2012

COMSET SEMICONDUCTORS

P

S

The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted

in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary NPN types are 2N6055.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Base Voltage

2N6053

-60

V

Collector-EmitterVoltage

2N6053

-60

V

Emitter-Base Voltage

-5.0

V

Collector Current

-8

A

Collector Peak Current

-16

A

Base Current

-120

mA

Power Dissipation

100

W

Junction

Storage Temperature

200

°C

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.17

°C/W