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BDY26 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDY26 Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 1 | 3 24/09/2012 COMSET SEMICONDUCTORS N NP PN N S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S,, D DIIF FF FU US SE ED D M ME ES SA A.. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDY26, 183T2 180 V BDY27, 184T2 200 BDY28, 185T2 250 VCBO Collector-Base Voltage BDY26, 183T2 300 V BDY27, 184T2 400 BDY28, 185T2 500 VEBO Emitter-Base Voltage 10 V IC Collector Current 6 A IB Base Current 3 A PTOT Power Dissipation @ TC = 25° 87.5 W TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 2 °C/W |
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Similar Description - BDY26 |
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