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RJK03M7DPA-00-J5A Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK03M7DPA-00-J5A
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03M7DPA-00-J5A Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK03M7DPA
Preliminary
R07DS0773EJ0110 Rev.1.10
Page 3 of 6
Feb 22, 2012
Main Characteristics
30
24
18
12
6
50
0
2
468
10
0
12
3
4
5
10
3
1
30
300
1
10
100
1000
3
200
150
100
0
510
15
20
5 A
100
30
10 V
40
30
20
10
0
50
100
150
200
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
1 ms
2.7 V
2.9 V
3.0V
10 V
4.5 V
30
24
18
12
6
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by RDS(on)
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 5 V
Pulse Test
Pulse Test
VGS = 2.5 V
Tc = 75°C
25°C
–25°C
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Pulse Test
ID = 10 A
VGS = 4.5 V
2 A


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