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RJK03N7DPA-00-J5A Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK03N7DPA-00-J5A Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0788EJ0200 Rev.2.00 Page 1 of 6 Feb 12, 2013 Preliminary Datasheet RJK03N7DPA 30V, 35A, 4.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline G D SS S DD D 4 12 3 56 7 8 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 35 A Drain peak current ID(pulse) Note1 140 A Body-drain diode reverse drain current IDR 35 A Avalanche current IAP Note 2 12 A Avalanche energy EAS Note 2 14.4 mJ Channel dissipation Pch Note3 35 W Channel to case thermal impedance ch-c Note3 3.57 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C R07DS0788EJ0200 Rev.2.00 Feb 12, 2013 |
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