BD142

18/10/2012

COMSET SEMICONDUCTORS

1/2

NPN SILICON TRANSISTOR

POWER LINERAR AND SWITCHING APPLICATIONS

LF Large Signal Power Amplification

Low Saturation Voltage

High Dissipation Rating

Intended for a wide variety of intermediate-power applications.

It is especially suited for use in audio and inverter circuits at 12 volts.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

45

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

7

V

Collector-Emitter Voltage

50

V

Collector Current

15

A

Base Current

7

A

Power Dissipation

117

Watts

Junction Temperature

-65 to +200

°C

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (*)

45

V

Collector-Emitter Breakdown Voltage (*)

50

V

Collector-Emitter Saturation Voltage (*)

-

-

1.1

V

Collector-Emitter Cutoff Current

-

-

2

mA

Emitter-Base Cutoff Current

-

-

1

mA

Base-Emitter Voltage (*)

-

-

1.5

V

Second Breakdown collector current

3

-

-

A

Static Forward Current Transfer Ratio (*)

12.5

-

160

-

20

-

-

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%