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H5N2901FL-M0-ET2 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N2901FL-M0-ET2 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  R07DS0996EJ0100 Rev.1.00 Page 1 of 6 Jan 08, 2013 Preliminary Datasheet H5N2901FL-M0 290V - 18A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 290 V Gate to source voltage VGSS ±30 V Drain current ID 18 A Drain peak current ID (pulse) Note1 72 A Body-drain diode reverse drain current IDR 18 A Body-drain diode reverse drain peak current IDR (pulse) Note1 72 A Avalanche current IAP Note2 6 A Avalanche energy EAR Note2 2.1 mJ Channel dissipation Pch Note3 30 W Channel to case thermal impedance ch-c 4.17 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. STch = 25 C, Tch 150C 3. Value at Tc = 25 C R07DS0996EJ0100 Rev.1.00 Jan 08, 2013 |
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