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RJH1CV7DPK-00T0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH1CV7DPK-00T0
Description  1200V - 35A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH1CV7DPK-00T0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJH1CV7DPK
Preliminary
R07DS0748EJ0300 Rev.3.00
Page 4 of 9
Feb 14, 2013
100
60
80
40
20
0
1.0
4.0
3.5
2.5
3.0
2.0
1.5
10
8
6
4
2
0
Typical Transfer Characteristics
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25
02575
125
50
100
150
VCE = 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
IC = 10 mA
Gate to Emitter Voltage VGE (V)
1
3
2
4
5
1
3
2
4
5
8
12
20
16
10
18
148
12
20
16
10
18
14
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Tc = 25°C
Pulse Test
Tc = 150°C
Pulse Test
IC = 70 A
35 A
IC = 70 A
35 A
0
48
12
20
16
Tc= 25°C
150°C
VCE = 10 V
Pulse Test
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
−25
02575
125
50
100
150
Case Temparature Tc (°C)
35 A
IC = 70 A
VGE = 15 V
Pulse Test
30
25
20
15
10
5
0
Frequency Characteristics (Typical)
Frequency f (kHz)
1
100
10
1000
Tj = 125°C
Tc = 90°C
VCE = 400 V
VGE = 15 V
Rg = 5
Ω
duty = 50%
0
Collector current wave
(Square wave)


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