BSS138P datasheet(6/16 Pages) NXP

Part #	BSS138P

Description	60 V, 360 mA N-channel Trench MOSFET

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BSS138P

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Product data sheet

Rev. 1 — 2 November 2010

6 of 16

NXP Semiconductors

BSS138P

60 V, 360 mA N-channel Trench MOSFET

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.01.

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID =10 μA; VGS = 0 V

60

--V

VGS(th)

gate-source threshold

voltage

ID =250 μA; VDS =VGS

0.9

1.2

1.5

V

IDSS

drain leakage current

VDS =60V; VGS =0V

Tj =25 °C

--1

μA

Tj = 150 °C

--10

μA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

-

100

nA

RDSon

drain-source on-state

resistance

[1]

VGS =5V; ID =50mA

-

1

2

Ω

VGS =10V; ID =300 mA

-

0.9

1.6

Ω

gfs

forward

transconductance

VDS =10V; ID = 200 mA [1] -

700

-

mS

Dynamic characteristics

QG(tot)

total gate charge

ID =300 mA;

VDS =30V;

VGS =4.5 V

-

0.72

0.8

nC

QGS

gate-source charge

-

0.14

-

nC

QGD

gate-drain charge

-

0.24

-

nC

Ciss

input capacitance

VGS =0V; VDS =10V;

f=1MHz

-

3850pF

Coss

output capacitance

-

7

-

pF

Crss

reverse transfer

capacitance

-4

-pF

td(on)

turn-on delay time

VDS =50V;

RL =250 Ω;

VGS =10V;

RG =6 Ω

-

26ns

tr

rise time

-3

-ns

td(off)

turn-off delay time

-

9

20

ns

tf

fall time

-

4

-

ns

Source-drain diode

VSD

source-drain voltage

IS =115 mA; VGS = 0 V

0.47

0.75

1.1

V

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