RJK03R4DPA datasheet(2/11 Pages) RENESAS

Part #	RJK03R4DPA

Description	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK03R4DPA

Preliminary

R07DS0888EJ0110 Rev.1.10

Page 2 of 10

Oct 29, 2012

Electrical Characteristics

• MOS1

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

30

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

A

VGS = ±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

A

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D = 1 mA

RDS(on)

—

5.8

7.0

m



ID = 10 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

8.4

10.9

m



ID = 10 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

35

—

S

ID = 10 A, VDS = 5 V

Note4

Input capacitance

Ciss

—

1180

1650

pF

Output capacitance

Coss

—

252

—

pF

Reverse transfer capacitance

Crss

—

90

—

pF

VDS = 10 V

VGS = 0

f = 1MHz

Gate Resistance

Rg

—

1.0

2.2



Total gate charge

Qg

—

7.7

—

nC

Gate to source charge

Qgs

—

3.3

—

nC

Gate to drain charge

Qgd

—

2.0

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 20 A

Turn-on delay time

td(on)

—

3.8

—

ns

Rise time

tr

—

3.4

—

ns

Turn-off delay time

td(off)

—

13.2

—

ns

Fall time

tf

—

3.8

—

ns

VGS =10 V, ID = 10 A

VDD  10 V

RL = 1.0 

Rg = 4.7 

Body–drain diode forward voltage

VDF

—

0.83

1.08

V

IF = 20 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

9.0

—

ns

IF =20 A, VGS = 0

diF/ dt = 500 A/s

Notes: 4. Pulse test

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