BDX62_12 datasheet(2/4 Pages) COMSET

Part #	BDX62

Description	PNP SILICON DARLINGTON POWER TRANSISTOR

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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BDX62 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

2 | 4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Breakdown

Voltage (*)

IC=-0.1 A

IB=0

L=25mH

BDX62

-60

-

V

BDX62A

-80

-

BDX62B

-100

-

BDX62C

-120

-

ICEO

Collector Cutoff Current

VCE=-30 V

BDX62

-

-0.5

mA

VCE=-40 V

BDX62A

-

VCE=-50 V

BDX62B

-

VCE=-60 V

BDX62C

-

IEBO

Emitter Cutoff Current

VBE=-5 V

BDX62

-

-5.0

mA

BDX62A

BDX62B

BDX62C

ICBO

Collector-Base Cutoff Current

VCBO=-60 V

BDX62

-

-0.2

-

VCBO=-40 V

TCASE=200°C

-

-2

VCBO=-80 V

BDX62A

-

-0.2

VCBO=-50 V

TCASE=200°C

-

-2

VCBO=-100 V

BDX62B

-

-0.2

VCBO=-60 V

TCASE=200°C

-

-2

VCBO=-120 V

BDX62C

-

-0.2

VCBO=-70 V

TCASE=200°

-

-2

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-3.0 A

IB=-12 mA

BDX62

-

-2

V

BDX62A

BDX62B

BDX62C

VF

Forward Voltage (pulse

method)

IF=3 A

BDX62

-

-2.5

V

BDX62A

BDX62B

BDX62C

VBE

Base-Emitter Voltage (*)

IC=-3.0 A

VCE=-3V

BDX62

-

V

BDX62A

BDX62B

BDX62C

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