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BDX62C Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDX62C Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page BDX62 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 P PN NP P SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX62 -60 V BDX62A -80 BDX62B -100 BDX62C -120 VCEV Collector-EmitterVoltage VBE=-1.5 V BDX62 -60 V BDX62A -80 BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5.0 V IC Collector Current IC(RMS) -8 A ICM -12 IB Base Current -0.15 A PT Power Dissipation @ TC = 25° 90 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W |
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