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BDX62C Datasheet(PDF) 1 Page - Comset Semiconductor

Part # BDX62C
Description  PNP SILICON DARLINGTON POWER TRANSISTOR
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BDX62C Datasheet(HTML) 1 Page - Comset Semiconductor

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BDX62 – A – B – C
24/10/2012
COMSET SEMICONDUCTORS
1 | 4
P
PN
NP
P SILICON DARLINGTON POWER TRANSISTOR
The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
BDX62
-60
V
BDX62A
-80
BDX62B
-100
BDX62C
-120
VCEV
Collector-EmitterVoltage
VBE=-1.5 V
BDX62
-60
V
BDX62A
-80
BDX62B
-100
BDX62C
-120
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
IC(RMS)
-8
A
ICM
-12
IB
Base Current
-0.15
A
PT
Power Dissipation
@ TC = 25°
90
W
TJ
Junction Temperature
-55 to +200
°C
TS
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-C
Thermal Resistance, Junction to Case
1.94
°C/W


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