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BDX67A Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDX67A Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 4 page BDX67 – A – B – C 05/10/2012 COMSET SEMICONDUCTORS 3/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector-Base Cutoff Current TCASE=25°C VCB=100 V BDX67B - - 1 mA TCASE=200°C VCB=60 V - - 5 TCASE=25°C VCB=120 V BDX67C - - 1 TCASE=200°C VCB=70 V - - 5 hFE Dc Current Gain VCE=3 V, IC=1 A - 5200 - - VCE=3 V, IC=10 A 1000 - - VCE=3 V, IC=16 A - 4000 - VCE(SAT) Collector-Emitter Saturation Voltage (*) IC=10 A IB=40 mA BDX67 - - 2 V BDX67A BDX67B BDX67C VBE Base-Emitter Voltage(1&2) VCE=3 V IC=10 A BDX67 - - 2,5 V BDX67A BDX67B BDX67C VF Diode Forward Voltage IF=10 A BDX67 - 2,5 - V BDX67A BDX67B BDX67C Cc Collector Capacitance IE=0 A VCB=10V BDX67 - 300 - pF BDX67A BDX67B BDX67C ton Switching Characteristics VCC=12V IC=-10 A IB1=- IB2=0.04 A BDX67 - 1 - µs BDX67A BDX67B BDX67C toff BDX67 - 3.5 - BDX67A BDX67B BDX67C fhfe Small Signal Current Gain VCE=-3 V IC=-5 A BDX67 - 50 - kHz BDX67A BDX67B BDX67C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit |
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Similar Description - BDX67A |
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