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BDX66C Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDX66C Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page BDX66 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1/4 P PN NP P SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX67, BDX67A, BDX67B, BDX67C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage BDX66 60 V BDX66A 80 BDX66B 100 BDX66C 120 -VCBO Collector-Base Voltage BDX66 60 V BDX66A 80 BDX66B 100 BDX66C 120 -VEBO Emitter-Base Voltage 5.0 V -IC Collector Current -IC(RMS) 16 A -ICM 20 -IB Base Current 0.25 A PT Power Dissipation @ TC = 25° 150 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W |
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