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2SC5383 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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2SC5383 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 4 page 〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) ISAHAYA ELECTRONICS CORPORATION DESCRIPTION 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=0.3V max(@Ic=100mA,IB=10mA) ●Excellent linearity of DC forward gain. ●Ultra super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. ※) It shows hFE classification at right table. OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit V CBO Collector to Base voltage 50 V V CEO Collector to Emitter voltage 50 V V EBO Emitter to Base voltage 6 V I O Collector current 200 mA P c Collector dissipation 150 mW T j Junction temperature +150 ℃ T stg Storage temperature -55∼+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) Limits Parameter Symbol Test conditions Min Typ Max Unit C to E break down voltage V(BR)CEO I C=100μA ,R BE=∞ 50 - - V Collector cut off current ICBO V CB=50V, I E=0mA - - 0.1 μA Emitter cut off current IEBO V EB=6V, I C=0mA - - 0.1 μA DC forward current gain ※ hFE V CE=6V, I C=1mA 150 - 500 DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - C to E Saturation Vlotage VCE(sat) I C=100mA ,IB=10mA - - 0.3 V Gain bandwidth product fT V CE=6V, I E=-10mA - 200 - MHz Collector output capacitance Cob V CB=6V, I E=0,f=1MHz - 2.5 - pF Noise figure NF V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ - - 15 dB TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR Item E F hFE Item 150∼300 250∼500 JEITA:SC-75A JEDEC:- Type name hFE Item L F MARKING |
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Similar Description - 2SC5383_10 |
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