BDY55_12 datasheet(2/3 Pages) COMSET

Part #	BDY55

Description	NPN SILICON TRANSISTORS, DIFFUSED MESA

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

BDY55 – BDY56

23/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Breakdown

Voltage (*)

IC = 200 mA

IB = 0

BDY55

60

-

V

BDY56

120

-

ICEO

Collector-Emitter Cutoff

Current

VCE = 30 V

BDY55

-

0.7

mA

VCE = 60 V

BDY56

-

0.5

IEBO

Emitter-Base Cutoff Current

VEB = 7 V

BDY55

-

5

mA

BDY56

-

3

ICEX

Collector-Emitter Cutoff

Current

VCE = 100 V

VBE = -1.5 V

BDY55

-

5

mA

VCE = 100 V

VBE = -1.5 V

TCASE = 150°C

-

30

VCE = 150 V

VBE = -1.5 V

BDY56

-

3

VCE = 150 V

VBE = -1.5 V

TCASE = 150°C

-

30

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC = 4.0 A

IB = 0.4 A

BDY55

-

1.1

V

BDY56

IC = 10 A

IB = 3.3 A

BDY55

-

2.5

BDY56

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC = 10 A

IB = 3.3 A

BDY55

-

2.5

BDY56

VBE

Base-Emitter Voltage (*)

IC = 4.0 A

VCE = 4.0 V

BDY55

-

1.8

V

BDY56

HFE

Static Forward Current

transfer ratio (*)

VCE = 4 V

IC = 4 A

BDY55

20

-

70

V

BDY56

VCE = 4 V

IC =10 A

BDY55

10

BDY56

fT

Transition Frequency

VCE = 4.0 V

IC = 1.0 A,

f = 10 MHz

BDY55

10

-

MHz

BDY56

td + tr

Turn-on time

IC = 5 A

IB = 1 A

BDY55

-

0.5

µs

BDY56

ts + tf

Turn-off time

IC = 5 A

IB1 = 1 A

IB2 = -0.5 A

BDY55

-

2

µs

BDY56

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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