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BFY90 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BFY90 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 4 page  BFX89 – BFY90 25/10/2012 COMSET SEMICONDUCTORS 2/4 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction – Case Max 580 °C/W RthJ- Thermal Resistance, Junction – ambient Max 880 °C/W ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current (IE=0) VCB = 15V - - 10 nA VCEK* Collector-emitter Knee Voltage IC = 20mA - - 0.75 V fT Transition Frequency VCE = 5V f = 500MHZ IC =2 mA BFX89 - 1 - GHz BFY90 1 1.1 - VCE = 5V f = 500MHZ IC =25 mA BFX89 - 1.2 - BFY90 1.3 1.4 - hFE DC Current Gain IC= 2mA VCE= 1 V BFX89 20 - 150 - BFY90 25 - 150 IC= 25mA VCE= 1 V BFX89 20 - 125 BFY90 25 - 125 CCBO(1) Collector-base Capacitance IE =0 VCB = 10V f= 1MHZ VCE= 5 BFX89 - - 1.7 pF BFY90 - - 1.5 Cre(2) Reverse Capacitance IC= 2mAV f = 1MHZ BFX89 - 0.6 - pF BFY90 - 0.6 0.8 |
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