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RJK0636JPD Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJK0636JPD
Description  60 V - 25 A - N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0636JPD Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJK0636JPD
Preliminary
R07DS0365EJ0200 Rev.2.00
Page 5 of 6
Aug 29, 2012
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Ω
Vin
15 V
0
ID
VDS
IAP
V (BR)DSS
L
VDD
EAR =
L
• I
AP
2
•
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 30 V
Vout
Monitor
Rg
D = 1
0.05
10
μ
100
μ
1 m
10 m
100 m
10
1
0.1
0.001
0.01
0.2
0.1
0.5
0.01
1shot
pulse
0.02
P
DM
PW
T
D =
PW
T
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C


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