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RJK0654DPB Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0654DPB Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK0654DPB Preliminary R07DS1052EJ0200 Rev.2.00 Page 4 of 6 Apr 09, 2013 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature 20 16 12 8 4 –25 0 25 50 75 100 125 150 0 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 10 8 6 4 2 25 50 75 100 125 150 0 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Pulse Test Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 60 50 40 20 10000 1000 100 10 VGS = 0 V f = 1 MHz Crss Coss Ciss Gate Charge Qg (nC) Dynamic Input Characteristics 60 80 100 40 20 0 20 16 12 8 4 10 20 30 40 50 0 0 ID = 30 A VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V VGS VDS VGS = 10 V VGS = 0 V 10 V Pulse Test ID = 15 A 30 |
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