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TIC116D Datasheet(PDF) 3 Page - Comset Semiconductor |
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TIC116D Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 4 page TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S 29/10/2012 COMSET SEMICONDUCTORS 3 | 4 SEMICONDUCTORS Notes: 1. These values apply when the gate-cathode resistance RGK = 1kΩ 2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. 6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body . MECHANICAL DATA CASE TO-220 |
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Similar Description - TIC116D |
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