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RJK1001DPP-E0-T2 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK1001DPP-E0-T2
Description  N-Channel MOS FET 100 V, 80 A, 5.5 m
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK1001DPP-E0-T2 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK1001DPP-E0
Preliminary
R07DS0625EJ0200 Rev.2.00
Page 3 of 6
Oct 17, 2012
Main Characteristics
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
100
80
60
40
20
0
24
6
8
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
200
100
0
4
8
12
16
20
1
10
100
1000
1
10
100
0.1
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Drain to Source on State Resistance
vs. Drain Current
500
300
300
ID = 10 A
Pulse Test
VGS = 10 V
Pulse Test
100
10
1
0.1
1
10
1000
0.01
0.1
1000
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
VGS = 4.6 V
Pulse Test
5 V
6 V
5.4 V
10 V
Tc = 75
°C
25
°C
−25°C
VDS = 10 V
Pulse Test
40 A
20 A
Operation in this
area is limited by
R
DS(on)
10
μs
100
μs
50
40
30
20
10
0
50
100
150
200
Tc = 25
°C
1 shot pulse
DC Operation


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