RJK1028DPA-00-J5A datasheet(2/7 Pages) RENESAS

Part #	RJK1028DPA-00-J5A

Description	100V, 4A, 165m max. N Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

RJK1028DPA

Preliminary

R07DS0196EJ0400 Rev.4.00

Page 2 of 6

Apr 11, 2013

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

100

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

± 0.1

A

VGS = +12, -5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

10

A

VDS = 100 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D = 1 mA

RDS(on)

—

125

165

m



ID = 2 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

135

180

m



ID = 2 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

8.8

—

S

ID = 2 A, VDS = 5 V

Note4

Input capacitance

Ciss

—

450

—

pF

Output capacitance

Coss

—

42

—

pF

Reverse transfer capacitance

Crss

—

17

—

pF

VDS = 10 V

VGS = 0

f = 1 MHz

Gate Resistance

Rg

—

2.7

—



Total gate charge

Qg

—

3.7

—

nC

Gate to source charge

Qgs

—

1.5

—

nC

Gate to drain charge

Qgd

—

1.5

—

nC

VDD = 50 V

VGS = 4.5 V

ID = 4 A

Turn-on delay time

td(on)

—

8.3

—

ns

Rise time

tr

—

4.8

—

ns

Turn-off delay time

td(off)

—

35

—

ns

Fall time

tf

—

5.6

—

ns

VGS = 10 V, ID = 2 A

VDD  30 V

RL = 15 

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.82

1.07

V

IF = 4 A, VGS = 0

Note4

Body–drain diode reverse recovery

time

trr

—

27

—

ns

IF =4 A, VGS = 0

diF/ dt = 100 A/ s

Notes: 4. Pulse test

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