RJK1028DSP-00-J5 datasheet(3/7 Pages) RENESAS

Part #	RJK1028DSP-00-J5

Description	100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RJK1028DSP

Preliminary

R07DS0197EJ0300 Rev.3.00

Page 3 of 6

Apr 11, 2013

Main Characteristics

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

Drain Current

ID

(A)

Static Drain to Source On State Resistance

vs. Drain Current

10

8

6

4

2

0

2

468

10

8

6

4

2

0

12

3

4

5

Tc = 75

°C

25

°C

–25

°C

VDS = 5 V

Pulse Test

VGS = 2.7 V

Pulse Test

100

30

10

330

0.1

1

10

100

0.3

1200

900

600

300

0

36

9

12

Pulse Test

ID = 5 A

2 A

1000

300

VGS = 4.5 V

10 V

2.8 V

3.0 V

3.3 V

Pulse Test

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

4.0

3.0

2.0

1.0

0

50

100

150

200

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW

≤ 10 s

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Note 5 : When using the glass epoxy board

(FR4 40x40x1.6 mm)

10

1

0.1

0.01

0.001

0.1

0.3

1

3

10

30

100 300

50

Ta = 25 °C

1 shot Pulse

PW

=

10

ms

Operation in

this area is

limited by R

DS(on)

10

μs

Note

5

DC

Operation

(PW

≤ 10

s)

1 ms

3.2 V

3.1 V

2.9 V

10 V

4.5 V

1 A

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RJK1028DSP-00-J5 Datasheet(PDF) 3 Page - Renesas Technology Corp

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