BD677A datasheet(1/4 Pages) FAIRCHILD

Part #	BD677A

Description	Medium Power Linear and Switching Applications

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW=300

µs, duty Cycle=1.5% Pulsed

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD675A

: BD677A

: BD679A

: BD681

45

60

80

100

V

VCEO

Collector-Emitter Voltage

: BD675A

: BD677A

: BD679A

: BD681

45

60

80

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

4

A

ICP

*Collector Current (Pulse)

6

A

IB

Base Current

100

mA

PC

Collector Dissipation (TC=25°C)

40

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

*Collector-Emitter Sustaining Voltage

: BD675A

: BD677A

: BD679A

: BD681

IC = 50mA, IB = 0

45

60

80

100

V

ICBO

Collector-Base Voltage

: BD675A

: BD677A

: BD679A

: BD681

VCB = 45V, IE = 0

VCB = 60V, IE = 0

VCB = 80V, IE = 0

VCB = 100V, VBE = 0

200

µA

ICEO

Collector Cut-off Current

: BD675A

: BD677A

: BD679A

: BD681

VCE = 45V, VBE = 0

VCE = 60V, VBE = 0

VCE = 80V, VBE = 0

VCE = 100V, VBE = 0

500

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

2

mA

hFE

* DC Current Gain

: BD675A/677A/679A

: BD681

VCE = 3V, IC = 2A

VCE = 3V, IC = 1.5A

750

VCE(sat)

* Collector-Emitter Saturation Voltage

: BD675A/677A/679A

: BD681

IC = 2A, IB = 40mA

IC = 1.5A, IB = 30mA

2.8

2.5

V

VBE(on)

* Base-Emitter ON Voltage : BD675A/677A/679A

: BD681

VCE = 3V, IC = 2A

VCE = 3V, IC = 1.5A

2.5

V

BD675A/677A/679A/681

Medium Power Linear and Switching

Applications

• Medium Power Darlington TR

• Complement to BD676A, BD678A, BD680A and BD682 respectively

1

TO-126

1. Emitter

2.Collector

3.Base

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