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RJK4002DPD-00J2 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK4002DPD-00J2 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJK4002DPD Preliminary R07DS0835EJ0210 Rev.2.10 Page 3 of 6 Jan 29, 2014 Main Characteristics 5 4 3 2 1 0 04 8 12 16 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 0.1 1 10 1 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) VGS = 10 V Ta = 25 °C Pulse Test −25 0 25 50 75 100 125 150 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) 02468 1 0.01 0.1 0.001 10 8 6 2 4 0 10 Ta = 25 °C Pulse Test 7 V 10 V 5.4 V 5.6 V 5.8 V 6 V 6.4 V 6.2 V 5.2 V VGS = 5 V ID = 3 A 0.1 1 10 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) VGS = 10 V Ta = 25 °C Pulse Test 1.5 A di / dt = 100 A / μs VGS = 0, Ta = 25°C VDS = 10 V Pulse Test Tc = 75 °C 25 °C −25°C 10 1 110 1000 0.01 0.1 100 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 100 0.001 0.1 Tc = 25 °C 1 shot 10 μs Operation in this area is limited by RDS(on) |
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