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RJK4002DPD-00J2 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK4002DPD-00J2
Description  400V - 3A - MOS FET High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK4002DPD-00J2 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK4002DPD
Preliminary
R07DS0835EJ0210 Rev.2.10
Page 3 of 6
Jan 29, 2014
Main Characteristics
5
4
3
2
1
0
04
8
12
16
20
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
0.1
1
10
1
10
0.1
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
VGS = 10 V
Ta = 25
°C
Pulse Test
−25
0
25
50
75
100 125
150
Case Temperature
Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
02468
1
0.01
0.1
0.001
10
8
6
2
4
0
10
Ta = 25
°C
Pulse Test
7 V
10 V
5.4 V
5.6 V
5.8 V
6 V
6.4 V
6.2 V
5.2 V
VGS = 5 V
ID = 3 A
0.1
1
10
1000
100
10
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
VGS = 10 V
Ta = 25
°C
Pulse Test
1.5 A
di / dt = 100 A /
μs
VGS = 0, Ta = 25°C
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
−25°C
10
1
110
1000
0.01
0.1
100
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
100
0.001
0.1
Tc = 25
°C
1 shot
10 μs
Operation in this
area is limited by
RDS(on)


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