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RJK4012DPE-00J3 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK4012DPE-00J3 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0439EJ0200 Rev.2.00 Page 1 of 6 Jun 21, 2012 Preliminary Datasheet RJK4012DPE 400V - 15A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.34 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline 1 2 3 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D S G Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS 30 V Drain current ID 15 A Drain peak current ID (pulse) Note1 45 A Body-drain diode reverse drain current IDR 15 A Body-drain diode reverse drain peak current IDR (pulse) Note1 45 A Avalanche current IAP Note3 5 A Avalanche energy EAR Note3 1.4 mJ Channel dissipation Pch Note2 100 W Channel to case thermal impedance ch-c 1.25 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C R07DS0439EJ0200 (Previous: REJ03G1575-0100) Rev.2.00 Jun 21, 2012 |
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