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RJK4012DPE-00J3 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK4012DPE-00J3
Description  400V - 15A - MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK4012DPE-00J3 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0439EJ0200 Rev.2.00
Page 1 of 6
Jun 21, 2012
Preliminary Datasheet
RJK4012DPE
400V - 15A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
RDS(on) = 0.34  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
1
2
3
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
D
S
G
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
400
V
Gate to source voltage
VGSS
30
V
Drain current
ID
15
A
Drain peak current
ID (pulse)
Note1
45
A
Body-drain diode reverse drain current
IDR
15
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note1
45
A
Avalanche current
IAP
Note3
5
A
Avalanche energy
EAR
Note3
1.4
mJ
Channel dissipation
Pch
Note2
100
W
Channel to case thermal impedance
ch-c
1.25
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. PW
 10 s, duty cycle  1%
2. Value at Tc = 25
C
3. STch = 25
C, Tch  150C
R07DS0439EJ0200
(Previous: REJ03G1575-0100)
Rev.2.00
Jun 21, 2012


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