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RJK4515DPK Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK4515DPK Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0472EJ0200 Rev.2.00 Page 1 of 6 Jun 21, 2012 Preliminary Datasheet RJK4515DPK 450V - 27A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.171 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D S G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 450 V Gate to source voltage VGSS 30 V Drain current ID 27 A Drain peak current ID (pulse) Note1 81 A Body-drain diode reverse drain current IDR 27 A Body-drain diode reverse drain peak current IDR (pulse) Note1 81 A Avalanche current IAP Note3 8 A Avalanche energy EAR Note3 3.6 mJ Channel dissipation Pch Note2 150 W Channel to case thermal impedance ch-c 0.833 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C R07DS0472EJ0200 (Previous: REJ03G1869-0100) Rev.2.00 Jun 21, 2012 |
Similar Part No. - RJK4515DPK_12 |
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Similar Description - RJK4515DPK_12 |
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