Electronic Components Datasheet Search |
|
RJK5026DPP-E0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJK5026DPP-E0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0608EJ0100 Rev.1.00 Page 1 of 6 Jun 21, 2012 Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 2 3 D 1. Gate 2. Drain 3. Source S G Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID Note4 6 A Drain peak current ID (pulse) Note1 18 A Body-drain diode reverse drain current IDR 6 A Body-drain diode reverse drain peak current IDR (pulse) Note1 18 A Avalanche current IAP Note3 4 A Avalanche energy EAR Note3 0.88 mJ Channel dissipation Pch Note2 28.5 W Channel to case thermal impedance ch-c 4.38 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C 4. Limited by maximum safe operation area R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 |
Similar Part No. - RJK5026DPP-E0_12 |
|
Similar Description - RJK5026DPP-E0_12 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |