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RJK6002DJE Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK6002DJE Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS0845EJ0100 Rev.1.00 Page 1 of 3 Jul 05, 2011 Preliminary Datasheet RJK6002DJE 600V - 2A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Source 2. Drain 3. Gate 3 2 1 D S G Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID Note1 2 A Drain peak current ID (pulse) Note3 4 A Body-drain diode reverse drain current IDR Note1 2 A Body-drain diode reverse drain peak current IDR (pulse) Note3 4 A Channel dissipation Pch Note2 0.9 W Channel to ambient thermal impedance ch-a 139 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. Limited by Tch max. 2. Value at Tc = 25 C 3. Pulse width limited by safe operating area. R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 |
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