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RJK6018DPM Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK6018DPM Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0131EJ0200 Rev.2.00 Page 1 of 6 Jun 21, 2012 Preliminary Datasheet RJK6018DPM 600V - 30A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 1. Gate 2. Drain 3. Source 1 2 3 D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID Note4 30 A Drain peak current ID (pulse) Note1 90 A Body-drain diode reverse drain current IDR 30 A Body-drain diode reverse drain peak current IDR (pulse) Note1 90 A Avalanche current IAP Note3 6 A Avalanche energy EAR Note3 1.9 mJ Channel dissipation Pch Note2 60 W Channel to case thermal impedance ch-c 2.08 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C 4. Limited by maximum safe operation area R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 |
Similar Part No. - RJK6018DPM_12 |
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Similar Description - RJK6018DPM_12 |
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