MRF927T3 datasheet(2/12 Pages) MOTOROLA

Part #	MRF927T3

Description	LOW NOISE HIGH FREQUENCY TRANSISTOR

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MRF927T1 MRF927T3

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 0.1 mA, IB = 0 mA)

V(BR)CEO

10

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO

20

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mA, IC = 0)

V(BR)EBO

1.5

—

Vdc

Emitter Cutoff Current

(VEB = 1.0 Vdc, IC = 0)

IEBO

—

0.1

µA

ON CHARACTERISTICS

DC Current Gain

(VCE = 1.0 Vdc, IC = 0.5 mA)

hFE

50

—

200

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

0.33

—

pF

Current–Gain Bandwidth Product

(VCE = 3.0 Vdc, IE = 5.0 mA, f = 1.0 GHz)

f

τ

—

8.0

—

GHz

PERFORMANCE CHARACTERISTICS

Noise Figure — Minimum

(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)

Figure 3

NFmin

—

1.7

—

dB

Associated Gain at Minimum Noise Figure

(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)

Figure 3

GNF

—

9.8

—

dB

Maximum Unilateral Gain

(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)

GUmax

—

15

—

dB

Insertion Gain

(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)

|S212|

—

8.0

—

dB

Noise Resistance

(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)

RN

—

62

—

Ohms

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