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FL7732MF116 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FL7732MF116 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 13 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FL7732 • Rev. 1.0.6 5 Electrical Characteristics VDD=15 V and TA=25°C, unless otherwise specified. Symbol Parameter Condition Min. Typ. Max. Unit VDD Section VDD-ON Turn-On Threshold Voltage 14.5 16.0 17.5 V VDD-OFF Turn-Off Threshold Voltage 6.75 7.75 8.75 V IDD-OP Operating Current At Maximum Frequency CL=1 nF 3 4 5 mA IDD-ST Startup Current VDD=VDD-ON – 0.16 V 2 20 μA VOVP VDD Over-Voltage-Protection Level 22.0 23.5 25.0 V Gate Section VOL Output Voltage Low VDD=20 V, IGATE=-1 mA 1.5 V VOH Output Voltage High VDD=10 V, IGATE=+1 mA 5 V Isource Peak Sourcing Current VDD=10 ~ 20 V 60 mA Isink Peak Sinking Current VDD=10 ~ 20 V 180 mA tr Rising Time CL=1 nF 100 150 200 ns tf Falling Time CL=1 nF 20 60 100 ns VCLAMP Output Clamp Voltage 12 15 18 V Oscillator Section fMAX-CC Maximum Frequency in CC VDD=10 V, 20 V 60 65 70 kHz fMIN-CC Minimum Frequency in CC VDD=10 V, 20 V 21.0 23.5 26.0 kHz VSMAX-CC VS for Maximum Frequency in CC f=fMAX-2 kHz 2.25 2.35 2.45 V VSMIN-CC VS for Minimum Frequency in CC f=fMIN +2 kHz 0.55 0.85 1.15 V tON(MAX) Maximum Turn-On Time 12 14 16 μs Current-Sense Section VRV Reference Voltage 2.475 2.500 2.525 V VCCR EAI Voltage for CC Regulation VCS=0.44 V 2.38 2.43 2.48 V tLEB Leading-Edge Blanking Time 300 ns tMIN Minimum On Time in CC VCOMI=0 V 600 ns tPD Propagation Delay to GATE 50 100 150 ns tDIS-BNK tDIS Blanking Time of VS 1.5 μs IVS-BNK VS Current for VS Blanking 100 μA Current-Error-Amplifier Section Gm Transconductance 85 μmho ICOMI-SINK COMI Sink Current VEAI=3 V, VCOMI=5 V 25 38 μA ICOMI-SOURCE COMI Source Current VEAI=2 V, VCOMI=0 V 25 38 μA VCOMI-HGH COMI High Voltage VEAI=2 V 4.9 V VCOMI-LOW COMI Low Voltage VEAI=3 V 0.1 V Continued on the following page… |
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