FQT1N80 Rev. A

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2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FQT1N80

FQT1N80

SOT-223

330mm

12mm

4000

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

800

-

-

V

/

Breakdown Voltage Temperature

Coefficient

0.8

-

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-

15.5

20

Ω

Forward Transconductance

(Note 4)

-0.75

-

S

Input Capacitance

f = 1MHz

-

150

195

pF

Output Capacitance

-

20

30

pF

Reverse Transfer Capacitance

-

2.7

5.0

pF

Total Gate Charge at 10V

(Note 4, 5)

-5.5

7.2

nC

Gate to Source Gate Charge

-

1.1

-

nC

Gate to Drain “Miller” Charge

-

3.3

-

nC

Turn-On Delay Time

(Note 4, 5)

-10

30

ns

Turn-On Rise Time

-

25

60

ns

Turn-Off Delay Time

-

15

40

ns

Turn-Off Fall Time

-

25

60

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

0.2

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

0.8

A

Drain to Source Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

(Note 4)

-

300

-

ns

Reverse Recovery Charge

-

0.6

-

µC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics