EDF1AS, EDF1BS, EDF1CS, EDF1DS

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Vishay General Semiconductor

Revision: 19-Aug-13

2

Document Number: 88578

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note



Fig. 1 - Derating Curves Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

PARAMETER

SYMBOL

EDF1AS

EDF1BS

EDF1CS

EDF1DS

UNIT

38

°C/W

12

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

EDF1DS-E3/45

0.406

45

50

Tube

EDF1DS-E3/77

0.406

77

1500

13" diameter paper tape and reel

20

40

60

80

100

120

140

160

0

0.5

1.0

I

or Inductive Load

0.75

0.25

0.51 x 0.51" (13 x 13 mm)

Copper Pads

Ambient Temperature (°C)

Capacitive

Loads

5.0

10

20

=

I

pk

I

AV

1

10

100

0

10

20

30

40

50

60

Number of Cycles at 60 Hz

T

Single Sine-Wave

1.0 Cycle

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.1

1

10

100

1000

T

T

Percent of Rated Peak Reverse Voltage (%)