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KSC5305 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC5305 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Thermal Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage 800 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Characteristics Rating Unit Rθjc Thermal Resistance Junction to Case 1.65 °C/W Rθja Junction to Ambient 62.5 KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement 1.Base 2.Collector 3.Emitter 1 TO-220 C B E Equivalent Circuit |
Similar Part No. - KSC5305 |
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Similar Description - KSC5305 |
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