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H5PS1G83JFRE3L Datasheet(PDF) 10 Page - Hynix Semiconductor |
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H5PS1G83JFRE3L Datasheet(HTML) 10 Page - Hynix Semiconductor |
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10 / 62 page  Rev. 1.7 / Apr. 2012 10 H5PS1G83JFR Series 3. AC & DC Operating Conditions 3.1 DC Operating Conditions 3.1.1 Recommended DC Operating Conditions (SSTL_1.8) Note: 1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option. 2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD. 3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track varia- tions in VDDQ 4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc). 5. VTT of transmitting device must track VREF of receiving device. 3.1.2 ODT DC electrical characteristics Note: 1. Test condition for Rtt measurements Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I(VIL(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18 Measurement Definition for VM: Measurement Voltage at test pin (mid point) with no load. Symbol Parameter Rating Units Notes Min. Typ. Max. VDD Supply Voltage 1.7 1.8 1.9 V 1 VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 1,2 VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 1,2 VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ V 3,4 VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 5 PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTES Rtt effective impedance value for EMR(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1 Rtt effective impedance value for EMR(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1 Rtt effective impedance value for EMR(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 60 ohm 1 Deviation of VM with respect to VDDQ/2 delta VM -6 +6 % 1 Rtt(eff) = VIH (ac) - VIL (ac) I(VIH (ac)) - I(VIL (ac)) delta VM =( 2 x Vm VDDQ x 100% - 1) |
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