KSC5504DT datasheet(2/10 Pages) FAIRCHILD

Part #	KSC5504DT

Description	High Voltage High Speed Power Switch Application

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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2 / 10 page

Rev. A1, June 2001

Electrical Characteristics T

C=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=1mA, IE=0

1200

1350

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=5mA, IB=0

600

750

V

BVEBO

Emitter-Base Breakdown Voltage

IE=500µA, IC=0

12

13.7

V

ICES

Collector Cut-off Current

VCES=1200V,

VBE=0

TC=25°C

100

µA

TC=125°C

500

ICEO

Collector Cut-off Current

VCE=600V, IB=0

TC=25°C

100

µA

TC=125°C

500

IEBO

Emitter Cut-off Current

VEB=12V, IC=0

TC=25°C10

µA

hFE

DC Current Gain

VCE=1V, IC=0.5A

TC=25°C

152035

TC=125°C10

13

VCE=1V, IC=2A

TC=25°C4

6

TC=125°C3

4.1

VCE=2.5V, IC=1A

TC=25°C

121830

TC=125°C8

10

VCE(sat)

Collector-Emitter Saturation Voltage

IC=0.5A,

IB=0.05A

TC=25°C0.28

0.6

V

TC=125°C0.5

1.0

V

IC=1A, IB=0.2A

TC=25°C0.18

0.5

V

TC=125°C

0.3

0.75

V

IC=2A, IB=0.4A

TC=25°C0.5

1.5

V

TC=125°C2.0

3.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.8A,

IB=0.08A

TC=25°C0.77

1.0

V

TC=125°C0.60

0.9

V

IC=2A, IB=0.4A

TC=25°C0.85

1.2

V

TC=125°C0.70

1.0

V

Cib

Input Capacitance

VEB=10V, IC=0, f=1MHz

600

750

pF

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

75

100

pF

fT

Current Gain Bandwidth Product

IC=0.5A,VCE=10V

11

MHz

VF

Diode Forward Voltage

IF=1A

TC=25°C0.83

1.3

V

TC=125°C0.7

V

IF=2A

TC=25°C0.88

1.5

V

TC=125°C0.8

V

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