RJP65S05DWT/RJP65S05DWA

Preliminary

R07DS0822EJ0002 Rev.0.02

Page 3 of 3

Aug 09, 2012

Die Dimension

Illustration

Part of white

Part of dotted line

Part of gray

Note 1.

Note 2.

The back of the chip is processed with Au evaporation.

Note 3.

Recognition, target and any other patterns which are not related to

IGBT operation, may be changed without notice.

Definition

Al pattern

Bonding area

Final passivation

7.0

5.66

1.31

4.29

Emitter bonding pad (1)

Emitter bonding pad (3)

Emitter bonding pad (2)

Gate

bonding pad

Unit: mm

Ordering Information

Orderable Part Number

RJP65S05DWA-80#W0

RJP65S05DWT-80#X0