STB20N95K5 datasheet(4/20 Pages) STMICROELECTRONICS

Part #	STB20N95K5

Description	N-channel 950 V, 0.275 廓, 17.5 A SuperMESH 5??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5

4/20

Doc ID 16825 Rev 4

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

950

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 950 V,

VDS = 950 V, Tc=125 °C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID= 9 A

0.275 0.330

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-

1500

-

pF

Coss

Output capacitance

80

pF

Crss

Reverse transfer

capacitance

5pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

-170

-

pF

Co(er)

(2)

2.

energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-65

-

pF

RG

Intrinsic gate resistance

f = 1MHz open drain

-

3.5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 760 V, ID = 9 A

VGS =10 V

(see Figure 19)

-

40

8

25

-

nC

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